GaN Compact Device Modeling Engineer

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Skills you'll use

What you'll do

• Device model extraction for GaN power devices.
• Definition of test structures and layout as and when necessary.
• Develop and submit characterization testplan for model extraction
• Collaborate with different team like - Global GaN team, Technology development team, characterization measurement team, design team.
• Interaction with different modeling team to resolve discrepancies in the data, model etc.

Who can apply

• Education/Experience - M.S/PhD with focus on semiconductor devices
• Experience required - MS with 6+ years or PhD with 3-5 years of experience in power semiconductor domain.
• Knowledge of GaN semiconductor physics and application in understanding device data including Diode, Varactor, MOSFET etc.
• Knowledge of S-parameters and their application in extracting device models.
• Hands on experience with one of the industry level model extraction tools like ICCAP, MBP, BSIMPro is must.
• Strong statistical data analysis and problem-solving capability.
• Exposure to RF a plus (S-parameters etc.)
• Fluency in English Language - written & verbal
• Preferred qualifications
• GlobalFoundries is an equal opportunity employer, cultivating a diverse and inclusive workforce. We believe having a multicultural workplace enhances productivity, efficiency and innovation whilst our employees feel truly respected, valued and heard.

About GlobalFoundries

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